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Ir/Al multilayer Gates for High Temperature Operated AlGaN/GaN HEMTs

 Lalinský, T., Vanko, G., Dobročka, E., Osvald, J., Babchenko, O., Dzuba, J., Veselý, M., Vančo, L., Vogrinčič, P., Vincze, A. Physica Status Solidi (A) Applications and Materials Science, Volume 214, Issue 12, December 2017, Article number 1700691DOI: 10.1002/pssa.201700691 Abstract The fabrication and characterization of the sequentially evaporated Ir/Al multilayer gates of AlGaN/GaN circular high electron [...]

By | 2018-11-09T13:16:16+00:00 december 12th, 2017|Publikácie|0 Komentárov