Autor Lubomír Vančo

Effect of surface roughness on laser surface alloying of additively manufactured 17-4PH stainless steel

Posted on by Lubomír Vančo

A.S. Chaus, O.G. Devoino, M. Sahul, Ľ. Vančo, I. Buranský, M. Kusý

In: Surface & Coatings Technology. Vol. 454, (2023)

https://doi.org/10.1016/j.surfcoat.2022.129161

Abstract

In the present work, the evolution of the final microstructure in 17-4PH stainless steel additively manufactured and subjected to the laser surface alloying with boron and nitrogen is described with special emphasis on the influence of surface topography and roughness. It was shown that character of the surface topography, and hence the surface roughness of the additively manufactured samples plays a major role in the development of microstructure during laser surface alloying. Dendritic microstructure of a solid solution with a small amount of eutectic in the interdendritic space was observed in a laser-melted zone (LMZ) of so-called smooth samples. In contrast, fully eutectic microstructure was revealed in the LMZ of the rough samples. This resulted in significantly different microhardness of the LMZ of both samples, i.e. 317.0 ± 12.7 and 636.7 ± 18.5 HV0.1 for the smooth and rough samples. The microstructural features and varying microhardness were found to be attributed to the different degree of the steel alloying primarily with boron in the LMZ, significantly affected by the initial roughness of the sample surface. This mechanism can be used to enhance laser surface alloying of the additively manufactured products.

Synthesis of Sulfide Perovskites by Sulfurization with Boron Sulfides

Posted on by Lubomír Vančo

BYSTRICKÝ, Roman – TIWARI, Sameer K. – HUTÁR, Peter – VANČO, Ľubomír – SÝKORA, Milan.

In Inorganic Chemistry. Vol. 61, iss. 47 (2022)

https://doi.org/10.1021/acs.inorgchem.2c03200

Abstract

Chalcogenide perovskites (CPs), with the general composition ABX3, where A and B are metals and X = S and Se, have recently emerged as promising materials for application in photovoltaics. However, the development of CPs and their applications has been hindered by the limitations of available preparation methods. Here we present a new approach for the synthesis of CPs, based on the sulfurization of ternary and binary oxides or carbonates with in situ formed boron sulfides. In contrast to the previously described approaches, the method presented here uses chemically stable starting materials and yields pure-phase crystalline CPs within several hours, under low hazard conditions. CP yields over 95% are obtained at temperatures as low as 600 °C. The generality of the approach is demonstrated by the preparation of CPs with compositions BaZrS3, β-SrZrS3, BaHfS3, SrHfS3, and EuHfS3. Mechanistic insights about the formation of CPs are discussed.

Toward BaSi2/Si Heterojunction Thin-Film Solar Cells: Insights into Heterointerface Investigation, Barium Depletion, and Silicide-Mediated Silicon Crystallization

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TIAN, Yilei – MONTES, Ana Rita Bento – VANČO, Ľubomír – ČAPLOVIČOVÁ, Mária – VOGRINČIČ, Peter – SUTTA, Pavol – SATRAPINSKYY, Leonid – ZEMAN, Miro – ISABELLA, Olindo

In Advanced Materials Interfaces. Vol. 7, iss. 19 (2020)

https://doi.org/10.1002/admi.202000887

Abstract

The knowledge of the structural and compositional details of Si/BaSi2/Si heterostructure annealed at high temperature is a prerequisite for BaSi2 application in heterojunction thin-film solar cells. For this purpose, Si/BaSi2/Si heterostructures deposited by magnetron sputtering with different Si layer thickness are submitted to systematic structural and compositional characterizations. Results reveal a BaSi2/Si heterointerfacial variation caused by surface oxidation and Ba diffusion at the high temperature. Its effects on the optical and electrical properties of Si/BaSi2/Si heterostructure are presented. The outcomes of this work can be extended to BaSi2 deposited by other techniques, and generate substantial advantages in BaSi2 development ranging from improvement on material qualities and eventual deployment in thin-film solar cells.

Properties of sputtered BaSi2 thin films annealed in vacuum condition

Posted on by Lubomír Vančo

TIAN, Yilei – MONTES, Ana Rita – VANČO, Ľubomír – ISABELLA, Olindo – ZEMAN

In Japanese Journal of Applied Physics. Vol. 59, SF (2020)

https://doi.org/10.7567/1347-4065/ab5b59

Abstract

As a potential absorber candidate for high-efficient solar cell applications, BaSi2 films are confronted with issues of surface oxidation associated with the high-temperature annealing. Herein, BaSi2 films are deposited by the sputtering technique. A vacuum annealing process is subsequently carried out to crystallize sputtered BaSi2 films. Raman spectroscopy is used to study surface structures and crystalline quality. Elemental depth profile is measured by Auger Electron spectroscopy to understand the compositions of films. Optical and electrical properties are further investigated to reveal the effects of annealing condition. Applying vacuum annealing condition can effectively suppress diffusions of Ba and ensures a stochiometric BaSi2 layer. However, surface oxidation still occurs even in the vacuum environment owing to the high reactivity of Ba. Further attempts to prevent BaSi2 surface oxidation may focus on the combination of other methods, such as capping layer and reducing atmosphere, with vacuum (or low-pressure) annealing condition.

A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation

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CHAUHAN, Prerna – HASENÖHRL, Stanislav – VANČO, Ľubomír – ŠIFFALOVIČ, Peter – DOBROČKA, Edmund – MACHAJDÍK, Daniel – ROSOVÁ, Alica – GUCMANN, Filip – KOVÁČ, Jaroslav jr. – MATKO, Igor – KUBALL, Martin – KUZMÍK, Ján

In CrystEngComm. Vol. 22, iss. 1 (2020)

https://doi.org/10.1039/C9CE01549C

Abstract

Thick InAlN layers (In-molar fraction >0.37) on GaN buffer layers were prepared using a close-coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor. This work provides a discussion of the dependence of reactor parameters (pressure, ammonia flow and temperature) and unintentional Ga-incorporation on structural, optical and chemical properties of those layers down to the nanoscale. Rutherford back-scattering spectrometry, Auger electron spectroscopy, and transmission electron microscopy with the energy dispersive X-ray analysis were used for in-depth chemical analysis of layers. A diminishing Ga-auto-incorporation in thick InAlN layer creates a chemically graded InAl(Ga)N interlayer that assists in releasing of interfacial strain and paves the way toward In-rich InAlN layer. The rate of unintentional Ga-auto-incorporation in InAlN layers increases with decreasing of growth temperature, and increasing of reactor pressure and ammonia flow during growth. Raman and photoluminescence spectroscopy were used to get the crystal structural fingerprint influenced by Ga-incorporation. We suggested that Ga could incorporate at nitrogen vacancies at high reactor pressures (≥200 mbar). Screw dislocations and/or N-vacancies in InAl(Ga)N layers may be energetically favorable sites for In-incorporation and lead to compositional fluctuation and local In-rich InAl(Ga)N phase.

Interference-enhanced Raman scattering in SiO2/Si structures related to reflectance

Interference-enhanced Raman scattering in SiO2/Si structures related to reflectance

Posted on by Lubomír Vančo

Ľubomír Vančo, Mário Kotlár, Magdaléna Kadlečíková, Viliam Vretenár, Marian Vojs, Jaroslav Kováč

In Journal of raman spectroscopy. Vol. 50, iss. 10 (2019)

https://doi.org/10.1002/jrs.5666

Abstract

Enhancement of Raman scattering due to optical interference may act as a source of error in the issues necessitating a determination of Raman intensity. Its dependence on thin film thickness is the conventional way how to examine the effects of optical interference in Raman signal. To provide a new platform for evaluation of signal coming from substrate in the presence of a transparent capping, we investigate its relation to reflectance (R) instead of the capping thickness. We derived a theoretical model, which was experimentally tested on simple structures consisting of SiO2 deposited on mono-Si substrates. In agreement between the model and the experiment, interference enhancement is proportional to the product of (1 − R) terms taken at excitation and scattered light wavenumbers. We experimented with two different Raman bands in Si on two different Raman systems. The model was valid regardless of excitation, Raman band, and grating. Constructed for normal incidence, it was in agreement with experiment using objectives with numerical apertures up to 0.25 (0.32). The model was valid also in ultraviolet region, where imaginary part in refractive index of Si considerably rises.

Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films

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KUNDRATA, Ivan – FRÖHLICH, Karol – VANČO, Ľubomír – MICUŠÍK, Matej – BACHMANN, Julien

In Beilstein Journal of Nanotechnology. Vol. 10, (2019)

https://doi.org/10.3762/bjnano.10.142

Abstract

Lithiated thin films are necessary for the fabrication of novel solid-state batteries, including the electrodes and solid electrolytes. Physical vapour deposition and chemical vapour deposition can be used to deposit lithiated films. However, the issue of conformality on non-planar substrates with large surface area makes them impractical for nanobatteries the capacity of which scales with surface area. Atomic layer deposition (ALD) avoids these issues and is able to deposit conformal films on 3D substrates. However, ALD is limited in the range of chemical reactions, due to the required volatility of the precursors. Moreover, relatively high temperatures are necessary (above 100 °C), which can be detrimental to electrode layers and substrates, for example to silicon into which the lithium can easily diffuse. In addition, several highly reactive precursors, such as Grignard reagents or n-butyllithium (BuLi) are only usable in solution. In theory, it is possible to use BuLi and water in solution to produce thin films of LiH. This theoretical reaction is self-saturating and, therefore, follows the principles of solution atomic layer deposition (sALD). Therefore, in this work the sALD technique and principles have been employed to experimentally prove the possibility of LiH deposition. The formation of homogeneous air-sensitive thin films, characterized by using ellipsometry, grazing incidence X-ray diffraction (GIXRD), in situ quartz crystal microbalance, and scanning electron microscopy, was observed. Lithium hydride diffraction peaks have been observed in as-deposited films by GIXRD. X-ray photoelectron spectroscopy and Auger spectroscopy analysis show the chemical identity of the decomposing air-sensitive films. Despite the air sensitivity of BuLi and LiH, making many standard measurements difficult, this work establishes the use of sALD to deposit LiH, a material inaccessible to conventional ALD, from precursors and at temperatures not suitable for conventional ALD.

Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer

Posted on by Lubomír Vančo

Prerna Chauhan, Stanislav Hasenöhrl, Edmund Dobročka, Ľubomír Vančo, Roman Stoklas, Jaroslav Kováč, Peter Šiffalovič, Ján Kuzmík

In Applied Surface Science. Vol.470, (2019)

https://doi.org/10.1016/j.apsusc.2018.10.231

Abstract

Thick (>150nm) InxAl1-xN layers were grown on GaN/sapphire (0001) by organometallic vapor phase epitaxy. Growth temperature of InxAl1-xN layers was reduced from 790 to 730°C, to examine the effects of growth temperature in InxAl1-xN layers grown under H2 carrier gas. Indium incorporation, surface morphology, electrical, and optical properties of InxAl1-xN layers were examined as a function of growth temperature. Increase in In-molar fraction, as determined by high resolution X-ray diffraction, was observed with decreasing growth temperature of InxAl1-xN layers at the expense of surface roughness. Unstrained InxAl1-xN layer was achieved at 730°C under H2 carrier gas with x=0.18. However, InxAl1-xN layer grown under N2 carrier gas at 730°C to study the effects of carrier gas, was observed with two times higher In-molar fraction (x=0.37) and one order lower carrier concentration. This work shows the essential requirement of a multi-characterization approach to establish a connection between structural, electrical, and optical properties to improve our understanding towards InxAl1-xN. Edge threading dislocations density is found to be the most important parameter in deciding the characteristics of an InxAl1-xN layer.

Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer

Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer

Posted on by Lubomír Vančo

Prerna Chauhan, Stanislav Hasenöhrl, Edmund Dobročka, Ľubomír Vančo, Roman Stoklas, Jaroslav Kováč, Peter Šiffalovič, Ján Kuzmík

In Applied Surface Science. Vol.470, (2019

doi.org/10.1016/j.apsusc.2018.10.231

Abstract

Thick (>150nm) InxAl1-xN layers were grown on GaN/sapphire (0001) by organometallic vapor phase epitaxy. Growth temperature of InxAl1-xN layers was reduced from 790 to 730°C, to examine the effects of growth temperature in InxAl1-xN layers grown under H2 carrier gas. Indium incorporation, surface morphology, electrical, and optical properties of InxAl1-xN layers were examined as a function of growth temperature. Increase in In-molar fraction, as determined by high resolution X-ray diffraction, was observed with decreasing growth temperature of InxAl1-xN layers at the expense of surface roughness. Unstrained InxAl1-xN layer was achieved at 730°C under H2 carrier gas with x=0.18. However, InxAl1-xN layer grown under N2 carrier gas at 730°C to study the effects of carrier gas, was observed with two times higher In-molar fraction (x=0.37) and one order lower carrier concentration. This work shows the essential requirement of a multi-characterization approach to establish a connection between structural, electrical, and optical properties to improve our understanding towards InxAl1-xN. Edge threading dislocations density is found to be the most important parameter in deciding the characteristics of an InxAl1-xN layer.

Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

Posted on by Lubomír Vančo

 HASENÖHRL, Stanislav – CHAUHAN, Prerna – DOBROČKA, Edmund – STOKLAS, Roman – VANČO, Ľubomír – VESELÝ, Marián – BOUAZZAOUI, Farah – CHAUVAT, Marie-Pierre – RUTERANA, Pierre – KUZMÍK, Ján

In Applied Physics Express. Vol. 12, iss. 1 (2019)

https://doi.org/10.7567/1882-0786/aaef41

Abstract

InAlN/GaN structures are grown using organometallic chemical vapor deposition at 730 °C. The sample for which the chamber cleaning step was applied after GaN growth shows a sharp In0.3Al0.7N/GaN transition, free electron density of ∼2 × 1011 cm−2 and mobility of 44 cm2 V−1 s−1. On the other hand, the sample prepared without growth interruption demonstrated In0.4Al0.15Ga0.45N at the interface and compositional grading towards the In0.4Al0.6N surface. In this case a two-dimensional hole gas (2DHG) is created with a density of ∼2 × 1012 cm−2 and mobility of ∼0.6 cm2 V−1 s−1. Ga incorporation in the InAlN barrier is crucial for designing non-inverted 2DHG transistors.