Centrum pre nanodiagnostiku materiálov

 HASENÖHRL, Stanislav – CHAUHAN, Prerna – DOBROČKA, Edmund – STOKLAS, Roman – VANČO, Ľubomír – VESELÝ, Marián – BOUAZZAOUI, Farah – CHAUVAT, Marie-Pierre – RUTERANA, Pierre – KUZMÍK, Ján

In Applied Physics Express. Vol. 12, iss. 1 (2019)

https://doi.org/10.7567/1882-0786/aaef41

Abstract

InAlN/GaN structures are grown using organometallic chemical vapor deposition at 730 °C. The sample for which the chamber cleaning step was applied after GaN growth shows a sharp In_0.3Al_0.7N/GaN transition, free electron density of ∼2 × 10¹¹ cm⁻² and mobility of 44 cm² V⁻¹ s⁻¹. On the other hand, the sample prepared without growth interruption demonstrated In_0.4Al_0.15Ga_0.45N at the interface and compositional grading towards the In_0.4Al_0.6N surface. In this case a two-dimensional hole gas (2DHG) is created with a density of ∼2 × 10¹² cm⁻² and mobility of ∼0.6 cm² V⁻¹ s⁻¹. Ga incorporation in the InAlN barrier is crucial for designing non-inverted 2DHG transistors.