Category: Articles

A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation

CHAUHAN, Prerna – HASENÖHRL, Stanislav – VANČO, Ľubomír – ŠIFFALOVIČ, Peter – DOBROČKA, Edmund – MACHAJDÍK, Daniel – ROSOVÁ, Alica – GUCMANN, Filip – KOVÁČ, Jaroslav jr. – MATKO, Igor – KUBALL, Martin – KUZMÍK, Ján

In CrystEngComm. Vol. 22, iss. 1 (2020)

https://doi.org/10.1039/C9CE01549C

Abstract

Thick InAlN layers (In-molar fraction >0.37) on GaN buffer layers were prepared using a close-coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor. This work provides a discussion of the dependence of reactor parameters (pressure, ammonia flow and temperature) and unintentional Ga-incorporation on structural, optical and chemical properties of those layers down to the nanoscale. Rutherford back-scattering spectrometry, Auger electron spectroscopy, and transmission electron microscopy with the energy dispersive X-ray analysis were used for in-depth chemical analysis of layers. A diminishing Ga-auto-incorporation in thick InAlN layer creates a chemically graded InAl(Ga)N interlayer that assists in releasing of interfacial strain and paves the way toward In-rich InAlN layer. The rate of unintentional Ga-auto-incorporation in InAlN layers increases with decreasing of growth temperature, and increasing of reactor pressure and ammonia flow during growth. Raman and photoluminescence spectroscopy were used to get the crystal structural fingerprint influenced by Ga-incorporation. We suggested that Ga could incorporate at nitrogen vacancies at high reactor pressures (≥200 mbar). Screw dislocations and/or N-vacancies in InAl(Ga)N layers may be energetically favorable sites for In-incorporation and lead to compositional fluctuation and local In-rich InAl(Ga)N phase.

A comparative life cycle assessment of graphene and activated carbon in a supercapacitor application

COSSUTTA, Matteo – VRETENÁR, Viliam – CENTENO, Teresa A. – KOTRUSZ, Peter – MCKECHNIE, Jon – PICKERING, Stephen J.

In Journal of Cleaner Production. Vol. 242, iss. 1 (2020)

https://doi.org/10.1016/j.jclepro.2019.118468

Abstract

Graphene shows substantial promise in improving the technical performance of a range of applications. For its development and before its potential mass adoption, it is critical to understand the associated cradle-to-grave life cycle environmental impacts. Previous studies on graphene environmental performance do not include end of life and the potential environmental credits generated by graphene reuse. This study undertakes a cradle-to-grave approach to evaluating graphene applications, considering a case study of supercapacitors manufactured with graphene and activated carbon active materials. The analysis includes active materials commercial-size production, supercapacitors production, supercapacitors use phase in an automotive application, and their end of life in which both devices are recycled. With current material performance and energy mixes, the graphene-based supercapacitor would increase impacts in all environmental categories analysed, ranging from 27% higher human toxicity to 213% greater ozone depletion and showing a 48% increase in GHG emissions. This unfavourable result arises due to the tested graphene material exhibiting inferior specific capacitance to the activated carbon comparator, as well as a more energy-intensive production process. Prospective analysis considers hypothetical performance where both active materials reach their theoretical specific capacitance, and the decarbonisation of electricity generation. The environmental impacts of both the activated carbon and graphene supercapacitors are reduced in these prospective scenarios, with the graphene based supercapacitor becoming the least impacting solution due to its lower active material requirements. The graphene-based device shows 36% lower GHG emission and overall shows lower impacts ranging from 14% less mineral, fossil and renewable resource depletion to 43% less photochemical ozone formation. These results support graphene as a valid candidate material for substituting activated carbon in supercapacitors provided graphene technical performance is improved, production optimised, and recycling developed.

Changes in microstructure of ledeburitic tool steel due to vacuum austenitizing and quenching, sub-zero treatments at – 140° and tempering

ĎURICA, Juraj – PTAČINOVÁ, Jana – DOMÁNKOVÁ, Mária – ČAPLOVIČ, Ľubomír – ČAPLOVIČOVÁ, Mária – HRUŠOVSKÁ, Linda – MALOVCOVÁ, Veronika – JURČI, Peter

In Vacuum. Vol. 170, (2019)

https://doi.org/10.1016/j.vacuum.2019.108977

Abstract

The microstructure of Vanadis 6 ledeburitic steel subjected to sub-zero treatments at −140 °C for different durations followed by various tempering regimes was investigated. The obtained results infer that: i) retained austenite amount is fivefold reduced by this treatment, and compressive stresses higher than 1500 MPa are generated in this phase, ii) martensite is refined due to SZT, and it contains enhanced number of crystal defects, iii) great number of “extra” cementitic carbides is formed during the sub-zero period; this number is higher than what is achieved by sub-zero treatments at −196 °C, iv) the number of “extra” carbides decreases with tempering, however, it remains higher than after in both the conventionally quenched and sub-zero treated at −196 °C steel, v) sub-zero treatments at −140 °C modify the precipitation behaviour substantially; coherent nano-sized ε-carbides and cementite were found already prior tempering the steel, and besides the cementite also M7C3 phase was detected after tempering treatment.

Tuning the orientation of few-layer MoS2 films using one-zone sulfurization

SOJKOVÁ, Michaela – VÉGSÖ, Karol – MRKYVKOVA, Naďa – HAGARA, Jakub – HUTÁR, Peter – ROSOVÁ, Alica – ČAPLOVIČOVÁ, Mária – LUDACKÁ, Uršula – SKÁKALOVÁ, Viera – MAJKOVÁ, Eva – ŠIFFALOVIČ, Peter – HULMAN, Martin

In RSC Advances. Vol. 9, iss. 51 (2019)

https://doi.org/10.1039/C9RA06770A

Abstract

Few-layer MoS2 films are promising candidates for applications in numerous areas, such as photovoltaics, photocatalysis, nanotribology, lithium batteries, hydro-desulfurization catalysis and dry lubricants, especially due to their distinctive electronic, optical, and catalytic properties. In general, two alignments of MoS2 layers are possible – the horizontal and the vertical one, having different physicochemical properties. Layers of both orientations are conventionally fabricated by a sulfurization of pre-deposited Mo films. So far, the Mo thickness was considered as a critical parameter influencing the final orientation of MoS2 layers with horizontally and vertically aligned MoS2 grown from thin (1 nm) and thick (3 nm) Mo films, respectively. Here, we present a fabrication protocol enabling the growth of horizontally or vertically aligned few-layer MoS2 films utilizing the same Mo thickness of 3 nm. We show that the sulfur vapor is another parameter influencing the growth mechanism, where a sulfurization with higher sulfur vapor pressure leads to vertical MoS2 layers and slow sulfur evaporation results in horizontally aligned layers for a thicker Mo starting layer.

Effect of the doping of PC61BM electron transport layer with carbon nanodots on the performance of inverted planar MAPbI3 perovskite solar cells

SUBAIR, Riyas – GIROLAMOC,  Diego Di – BODIK, Michal – NÁDAŽDY, Vojtech – LI, Bo – NÁDAŽDY, Peter – MARKOVIČ, Zoran – BENKOVIČOVÁ, Monika – CHLPÍK, Juraj – KOTLÁR, Mário – HALAHOVETS, Yurily – ŠIFFALOVIČ, Peter – JERGEL, Matej – TIANE, Jianjun – BRUNETTI, Francesca – MAJKOVÁ, Eva

In Solar Energy. Vol. 189, (2019)

https://doi.org/10.1016/j.solener.2019.07.088

Abstract

The doping effect of carbon nanodots (CNDs) in the PC61BM electron-transport layer on the performance of inverted planar MAPbI3 perovskite solar cells (PSCs) having two different kinds of the hole-transport layer, namely organic PEDOT:PSS and inorganic NiOx, was investigated. The CH3NH3PbI3 perovskite layer was deposited in air at 35% humidity. An average 11% and 12% enhancement of the power conversion efficiency (PCE) was achieved for 1 wt% CNDs doping in the PSCs with PEDOT:PSS and NiOx, respectively. This improvement is attributed to high electron density of CNDs resulting in a triple increase of the electrical conductivity of the PC61BM layer and passivation of the perovskite/PC61BM interface that is reflected by an increase of the open-circuit voltage. In line with this, parallel resistance and fill factor of the PSCs are also improved. Moreover, the energy-resolved electrochemical impedance spectroscopy revealed additional free-charge carriers in the PC61BM layer generated under illumination that were detected via the polaron states formation in the band gap with positive effect on the short-circuit current. All these factors contribute to the PCE improvement. Stability tests of the PSC with PEDOT:PSS under a continuous 24 hour 1.5 AM illumination showed a five times smaller final PCE decrease for the 1 wt% CNDs doping of the PC61BM layer comparing to the undoped counterpart. The passivation effect of CNDs, namely electron filling the traps formed by the photo-dimerization and photo-oxidation of PC61BM molecules, is responsible for this remarkable improvement of the short-term stability.

Covalent Diamond–Graphite Bonding: Mechanism of Catalytic Transformation

Covalent Diamond–Graphite Bonding: Mechanism of Catalytic Transformation

Semir Tulić, Thomas Waitz, Mária Čaplovičová, Gerlinde Habler, Marián Varga, Mário Kotlár, Viliam Vretenár, Oleksandr Romanyuk, Alexander Kromka, Bohuslav Rezek, Viera Skákalová

ACS Nano, 2019, 1344621-4630

doi.org/10.1021/acsnano.9b00692

Abstract

Aberration-corrected transmission electron microscopy of the atomic structure of diamond–graphite interface after Ni-induced catalytic transformation reveals graphitic planes bound covalently to the diamond in the upright orientation. The covalent attachment, together with a significant volume expansion of graphite transformed from diamond, gives rise to uniaxial stress that is released through plastic deformation. We propose a comprehensive model explaining the Ni-mediated transformation of diamond to graphite and covalent bonding at the interface as well as the mechanism of relaxation of uniaxial stress. We also explain the mechanism of electrical transport through the graphitized surface of diamond. The result may thus provide a foundation for the catalytically driven formation of graphene–diamond nanodevices.

Interference-enhanced Raman scattering in SiO2/Si structures related to reflectance

Interference-enhanced Raman scattering in SiO2/Si structures related to reflectance

Ľubomír Vančo, Mário Kotlár, Magdaléna Kadlečíková, Viliam Vretenár, Marian Vojs, Jaroslav Kováč

In Journal of raman spectroscopy. Vol. 50, iss. 10 (2019)

https://doi.org/10.1002/jrs.5666

Abstract

Enhancement of Raman scattering due to optical interference may act as a source of error in the issues necessitating a determination of Raman intensity. Its dependence on thin film thickness is the conventional way how to examine the effects of optical interference in Raman signal. To provide a new platform for evaluation of signal coming from substrate in the presence of a transparent capping, we investigate its relation to reflectance (R) instead of the capping thickness. We derived a theoretical model, which was experimentally tested on simple structures consisting of SiO2 deposited on mono-Si substrates. In agreement between the model and the experiment, interference enhancement is proportional to the product of (1 − R) terms taken at excitation and scattered light wavenumbers. We experimented with two different Raman bands in Si on two different Raman systems. The model was valid regardless of excitation, Raman band, and grating. Constructed for normal incidence, it was in agreement with experiment using objectives with numerical apertures up to 0.25 (0.32). The model was valid also in ultraviolet region, where imaginary part in refractive index of Si considerably rises.

Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films

KUNDRATA, Ivan – FRÖHLICH, Karol – VANČO, Ľubomír – MICUŠÍK, Matej – BACHMANN, Julien

In Beilstein Journal of Nanotechnology. Vol. 10, (2019)

https://doi.org/10.3762/bjnano.10.142

Abstract

Lithiated thin films are necessary for the fabrication of novel solid-state batteries, including the electrodes and solid electrolytes. Physical vapour deposition and chemical vapour deposition can be used to deposit lithiated films. However, the issue of conformality on non-planar substrates with large surface area makes them impractical for nanobatteries the capacity of which scales with surface area. Atomic layer deposition (ALD) avoids these issues and is able to deposit conformal films on 3D substrates. However, ALD is limited in the range of chemical reactions, due to the required volatility of the precursors. Moreover, relatively high temperatures are necessary (above 100 °C), which can be detrimental to electrode layers and substrates, for example to silicon into which the lithium can easily diffuse. In addition, several highly reactive precursors, such as Grignard reagents or n-butyllithium (BuLi) are only usable in solution. In theory, it is possible to use BuLi and water in solution to produce thin films of LiH. This theoretical reaction is self-saturating and, therefore, follows the principles of solution atomic layer deposition (sALD). Therefore, in this work the sALD technique and principles have been employed to experimentally prove the possibility of LiH deposition. The formation of homogeneous air-sensitive thin films, characterized by using ellipsometry, grazing incidence X-ray diffraction (GIXRD), in situ quartz crystal microbalance, and scanning electron microscopy, was observed. Lithium hydride diffraction peaks have been observed in as-deposited films by GIXRD. X-ray photoelectron spectroscopy and Auger spectroscopy analysis show the chemical identity of the decomposing air-sensitive films. Despite the air sensitivity of BuLi and LiH, making many standard measurements difficult, this work establishes the use of sALD to deposit LiH, a material inaccessible to conventional ALD, from precursors and at temperatures not suitable for conventional ALD.