CND

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So far CND has created 11 blog entries.

Adhesive-deformation relationships and mechanical properties of nc-AlCrN/a-SiNx hard coatings deposited at different bias voltages

M. Haršáni, N. Ghafoor, K. Calamba, P. Zacková, M. Sahul, T. Vopát, L. Satrapinskyy, M. Čaplovičová, Ľ. Čaplovič, Thin Solid Films, Volume 650, 2018, Pages 11-19 doi.org/10.1016/j.tsf.2018.02.006 Abstract A series of Al-Cr-Si-N hard coatings were deposited on WC-Co substrates with a negative substrate bias voltage ranging from −50 to −200 V using cathodic arc evaporation system. [...]

By | 2018-11-09T14:15:55+00:00 March 31st, 2018|Articles, Publikácie|0 Comments

Ir/Al multilayer Gates for High Temperature Operated AlGaN/GaN HEMTs

Lalinský, T., Vanko, G., Dobročka, E., Osvald, J., Babchenko, O., Dzuba, J., Veselý, M., Vančo, L., Vogrinčič, P., Vincze, A. Physica Status Solidi (A) Applications and Materials Science, Volume 214, Issue 12, December 2017, Article number 1700691DOI: 10.1002/pssa.201700691 Abstract The fabrication and characterization of the sequentially evaporated Ir/Al multilayer gates of AlGaN/GaN circular high electron mobility [...]

By | 2018-11-09T14:16:04+00:00 December 12th, 2017|Articles, Publikácie|0 Comments

Thermally induced age hardening in tough Ta-Al-N coatings via spinodal decomposition

Mikula, M., Sangiovanni, D.G., Plašienka, D., Roch, T., Čaplovičová, M., Truchlý, M., Satrapinskyy, L., Bystrický, R., Tonhauzerová, D., Vlčková, D., Kúš, P. Journal of Applied Physics 121, 2017, 155304 doi.org/10.1063/1.4981534 Abstract We combine experiments and ab initio density functional theory calculations to investigate the evolution in structural and mechanical properties of TaAlN coatings as [...]

By | 2018-11-09T14:16:11+00:00 April 21st, 2017|Articles, Publikácie|0 Comments

Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS2 films grown by pulsed laser deposition

Š. Chromik, M. Sojková, V. Vretenár, A. Rosová, E. Dobročka, M. Hulman doi.org/10.1016/j.apsusc.2016.06.038 Abstract Very thin MoS2 films were prepared on hexagonal GaN/AlGaN/GaN (0001) and Si (100) substrates from a stoichiometric target by a pulsed laser deposition. Combined results from Raman and X-ray reflectivity measurements have shown that the thinnest samples are 2–2.5nm thick. The [...]

By | 2018-11-09T14:16:20+00:00 February 15th, 2017|Articles, Publikácie|0 Comments