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So far CND has created 11 blog entries.

Interference‐enhanced Raman scattering in SiO2/Si structures related to reflectance

Ľubomír Vančo, Mário Kotlár, Magdaléna Kadlečíková, Viliam Vretenár, Marian Vojs, Jaroslav Kováč Journal of Raman Spectroscopy, 2019, 0377-0486 https://doi.org/10.1002/jrs.5666 Abstract Enhancement of Raman scattering due to optical interference may act as a source of error in the issues necessitating a determination of Raman intensity. Its dependence on thin film thickness is the conventional way how to [...]

By | 2019-08-15T12:26:23+00:00 august 15th, 2019|Publikácie|0 Komentárov

Covalent Diamond–Graphite Bonding: Mechanism of Catalytic Transformation

Semir Tulić, Thomas Waitz, Mária Čaplovičová, Gerlinde Habler, Marián Varga, Mário Kotlár, Viliam Vretenár, Oleksandr Romanyuk, Alexander Kromka, Bohuslav Rezek, Viera Skákalová ACS Nano, 2019, 1344621-4630 https://doi.org/10.1021/acsnano.9b00692 Abstract Aberration-corrected transmission electron microscopy of the atomic structure of diamond–graphite interface after Ni-induced catalytic transformation reveals graphitic planes bound covalently to the diamond in the upright orientation. [...]

By | 2019-08-15T12:26:01+00:00 august 15th, 2019|Publikácie|0 Komentárov

Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer

Prerna Chauhan, Stanislav Hasenöhrl, Edmund Dobročka, Ľubomír Vančo, Roman Stoklas, Jaroslav Kováč, Peter Šiffalovič, Ján Kuzmík doi.org/10.1016/j.apsusc.2018.10.231 Abstract Thick (>150nm) InxAl1-xN layers were grown on GaN/sapphire (0001) by organometallic vapor phase epitaxy. Growth temperature of InxAl1-xN layers was reduced from 790 to 730°C, to examine the effects of growth temperature in InxAl1-xN layers grown under [...]

By | 2018-11-09T14:14:10+00:00 október 29th, 2018|Publikácie|0 Komentárov

Oxidation-Induced Structure Transformation: Thin-Film Synthesis and Interface Investigations of Barium Disilicide toward Potential Photovoltaic Applications

Yilei Tian, Robin Vismara, Steve van Doorene, Pavol Šutta, L’ubomír Vančo, Marian Veselý, Peter Vogrinčič, Olindo Isabella, and Miro Zeman ACS Applied Energy Materials 2018 1 (7), 3267-3276 DOI: 10.1021/acsaem.8b00486 Abstract Barium disilicide (BaSi2) has been regarded as a promising absorber material for high-efficiency thin-film solar cells. However, it has confronted issues related to material synthesis and quality control. Here, we fabricate BaSi2 thin films [...]

By | 2018-11-09T14:14:19+00:00 jún 6th, 2018|Publikácie|0 Komentárov

Adhesive-deformation relationships and mechanical properties of nc-AlCrN/a-SiNx hard coatings deposited at different bias voltages

M. Haršáni, N. Ghafoor, K. Calamba, P. Zacková, M. Sahul, T. Vopát, L. Satrapinskyy, M. Čaplovičová, Ľ. Čaplovič, Thin Solid Films, Volume 650, 2018, Pages 11-19 doi.org/10.1016/j.tsf.2018.02.006 Abstract A series of Al-Cr-Si-N hard coatings were deposited on WC-Co substrates with a negative substrate bias voltage ranging from −50 to −200 V using cathodic arc evaporation system. [...]

By | 2018-11-09T14:14:29+00:00 marec 31st, 2018|Publikácie|0 Komentárov

Thermally induced age hardening in tough Ta-Al-N coatings via spinodal decomposition

Mikula, M., Sangiovanni, D.G., Plašienka, D., Roch, T., Čaplovičová, M., Truchlý, M., Satrapinskyy, L., Bystrický, R., Tonhauzerová, D., Vlčková, D., Kúš, P. Journal of Applied Physics 121, 2017, 155304 doi.org/10.1063/1.4981534 Abstract We combine experiments and ab initio density functional theory calculations to investigate the evolution in structural and mechanical properties of TaAlN coatings [...]

By | 2018-11-09T14:14:35+00:00 apríl 21st, 2017|Publikácie|0 Komentárov

Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS2 films grown by pulsed laser deposition

Š. Chromik, M. Sojková, V. Vretenár, A. Rosová, E. Dobročka, M. Hulman doi.org/10.1016/j.apsusc.2016.06.038 Abstract Very thin MoS2 films were prepared on hexagonal GaN/AlGaN/GaN (0001) and Si (100) substrates from a stoichiometric target by a pulsed laser deposition. Combined results from Raman and X-ray reflectivity measurements have shown that the thinnest samples are 2–2.5nm thick. The [...]

By | 2018-11-09T14:14:56+00:00 február 15th, 2017|Publikácie|0 Komentárov