Centrum pre Nanodiagnostiku Materiálov

CHAUHAN, Prerna – HASENÖHRL, Stanislav – VANČO, Ľubomír – ŠIFFALOVIČ, Peter – DOBROČKA, Edmund – MACHAJDÍK, Daniel – ROSOVÁ, Alica – GUCMANN, Filip – KOVÁČ, Jaroslav jr. – MATKO, Igor – KUBALL, Martin – KUZMÍK, Ján

In CrystEngComm. Vol. 22, iss. 1 (2020)

https://doi.org/10.1039/C9CE01549C

Abstract

Thick InAlN layers (In-molar fraction >0.37) on GaN buffer layers were prepared using a close-coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor. This work provides a discussion of the dependence of reactor parameters (pressure, ammonia flow and temperature) and unintentional Ga-incorporation on structural, optical and chemical properties of those layers down to the nanoscale. Rutherford back-scattering spectrometry, Auger electron spectroscopy, and transmission electron microscopy with the energy dispersive X-ray analysis were used for in-depth chemical analysis of layers. A diminishing Ga-auto-incorporation in thick InAlN layer creates a chemically graded InAl(Ga)N interlayer that assists in releasing of interfacial strain and paves the way toward In-rich InAlN layer. The rate of unintentional Ga-auto-incorporation in InAlN layers increases with decreasing of growth temperature, and increasing of reactor pressure and ammonia flow during growth. Raman and photoluminescence spectroscopy were used to get the crystal structural fingerprint influenced by Ga-incorporation. We suggested that Ga could incorporate at nitrogen vacancies at high reactor pressures (≥200 mbar). Screw dislocations and/or N-vacancies in InAl(Ga)N layers may be energetically favorable sites for In-incorporation and lead to compositional fluctuation and local In-rich InAl(Ga)N phase.

ĎURICA, Juraj – PTAČINOVÁ, Jana – DOMÁNKOVÁ, Mária – ČAPLOVIČ, Ľubomír – ČAPLOVIČOVÁ, Mária – HRUŠOVSKÁ, Linda – MALOVCOVÁ, Veronika – JURČI, Peter

In Vacuum. Vol. 170, (2019)

https://doi.org/10.1016/j.vacuum.2019.108977

Abstract

The microstructure of Vanadis 6 ledeburitic steel subjected to sub-zero treatments at −140 °C for different durations followed by various tempering regimes was investigated. The obtained results infer that: i) retained austenite amount is fivefold reduced by this treatment, and compressive stresses higher than 1500 MPa are generated in this phase, ii) martensite is refined due to SZT, and it contains enhanced number of crystal defects, iii) great number of “extra” cementitic carbides is formed during the sub-zero period; this number is higher than what is achieved by sub-zero treatments at −196 °C, iv) the number of “extra” carbides decreases with tempering, however, it remains higher than after in both the conventionally quenched and sub-zero treated at −196 °C steel, v) sub-zero treatments at −140 °C modify the precipitation behaviour substantially; coherent nano-sized ε-carbides and cementite were found already prior tempering the steel, and besides the cementite also M₇C₃ phase was detected after tempering treatment.

SUBAIR, Riyas – GIROLAMOC,  Diego Di – BODIK, Michal – NÁDAŽDY, Vojtech – LI, Bo – NÁDAŽDY, Peter – MARKOVIČ, Zoran – BENKOVIČOVÁ, Monika – CHLPÍK, Juraj – KOTLÁR, Mário – HALAHOVETS, Yurily – ŠIFFALOVIČ, Peter – JERGEL, Matej – TIANE, Jianjun – BRUNETTI, Francesca – MAJKOVÁ, Eva

In Solar Energy. Vol. 189, (2019)

https://doi.org/10.1016/j.solener.2019.07.088

Abstract

The doping effect of carbon nanodots (CNDs) in the PC₆₁BM electron-transport layer on the performance of inverted planar MAPbI₃ perovskite solar cells (PSCs) having two different kinds of the hole-transport layer, namely organic PEDOT:PSS and inorganic NiO_x, was investigated. The CH₃NH₃PbI₃ perovskite layer was deposited in air at 35% humidity. An average 11% and 12% enhancement of the power conversion efficiency (PCE) was achieved for 1 wt% CNDs doping in the PSCs with PEDOT:PSS and NiO_x, respectively. This improvement is attributed to high electron density of CNDs resulting in a triple increase of the electrical conductivity of the PC₆₁BM layer and passivation of the perovskite/PC₆₁BM interface that is reflected by an increase of the open-circuit voltage. In line with this, parallel resistance and fill factor of the PSCs are also improved. Moreover, the energy-resolved electrochemical impedance spectroscopy revealed additional free-charge carriers in the PC₆₁BM layer generated under illumination that were detected via the polaron states formation in the band gap with positive effect on the short-circuit current. All these factors contribute to the PCE improvement. Stability tests of the PSC with PEDOT:PSS under a continuous 24 hour 1.5 AM illumination showed a five times smaller final PCE decrease for the 1 wt% CNDs doping of the PC₆₁BM layer comparing to the undoped counterpart. The passivation effect of CNDs, namely electron filling the traps formed by the photo-dimerization and photo-oxidation of PC₆₁BM molecules, is responsible for this remarkable improvement of the short-term stability.

ČAPLOVIČOVÁ, Mária – MAREŠ, Jakub – TOLASZ, Jakub – KOČÍ, Eva – BAKARDJIEVA, Snejana – FAJGAR, Radek – JANDOVÁ, Věra

In Microscopy and Microanalysis. Vol. 25, Suppl. 2 (2019)

https://doi.org/10.1017/S1431927619011875

KUNDRATA, Ivan – FRÖHLICH, Karol – VANČO, Ľubomír – MICUŠÍK, Matej – BACHMANN, Julien

In Beilstein Journal of Nanotechnology. Vol. 10, (2019)

https://doi.org/10.3762/bjnano.10.142

Abstract

Lithiated thin films are necessary for the fabrication of novel solid-state batteries, including the electrodes and solid electrolytes. Physical vapour deposition and chemical vapour deposition can be used to deposit lithiated films. However, the issue of conformality on non-planar substrates with large surface area makes them impractical for nanobatteries the capacity of which scales with surface area. Atomic layer deposition (ALD) avoids these issues and is able to deposit conformal films on 3D substrates. However, ALD is limited in the range of chemical reactions, due to the required volatility of the precursors. Moreover, relatively high temperatures are necessary (above 100 °C), which can be detrimental to electrode layers and substrates, for example to silicon into which the lithium can easily diffuse. In addition, several highly reactive precursors, such as Grignard reagents or n-butyllithium (BuLi) are only usable in solution. In theory, it is possible to use BuLi and water in solution to produce thin films of LiH. This theoretical reaction is self-saturating and, therefore, follows the principles of solution atomic layer deposition (sALD). Therefore, in this work the sALD technique and principles have been employed to experimentally prove the possibility of LiH deposition. The formation of homogeneous air-sensitive thin films, characterized by using ellipsometry, grazing incidence X-ray diffraction (GIXRD), in situ quartz crystal microbalance, and scanning electron microscopy, was observed. Lithium hydride diffraction peaks have been observed in as-deposited films by GIXRD. X-ray photoelectron spectroscopy and Auger spectroscopy analysis show the chemical identity of the decomposing air-sensitive films. Despite the air sensitivity of BuLi and LiH, making many standard measurements difficult, this work establishes the use of sALD to deposit LiH, a material inaccessible to conventional ALD, from precursors and at temperatures not suitable for conventional ALD.